Rohm Semiconductor RCJ081N20TL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RCJ081N20TL
- Rohm Semiconductor
- MOSFET N-CH 200V 8A LPTS
- Transistors - FETs, MOSFETs - Single
- RCJ081N20TL Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 16170
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RCJ081N20TL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 200V 8A LPTS |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package LPTS |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.56W (Ta), 40W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 8A (Tc) |
| Rds On (Max) @ Id, Vgs 770mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id 5.25V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RCJ081N20TL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RCJ081N20TL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RCJ081N20TL сопутствующие товары
Комментарии
Rohm Semiconductor
RP1E090RPTR
MOSFET P-CH 30V 9A MPT6
RSJ151P10TL
MOSFET P-CH 30V 9A MPT6
RSS085N05FU6TB
MOSFET P-CH 30V 9A MPT6
RRH100P03GZETB
MOSFET P-CH 30V 9A MPT6
R6007ENJTL
MOSFET P-CH 30V 9A MPT6
RCJ100N25TL
MOSFET P-CH 30V 9A MPT6
R5009FNJTL
MOSFET P-CH 30V 9A MPT6
R6011KNJTL
MOSFET P-CH 30V 9A MPT6
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
