Rohm Semiconductor R6024KNZC8
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- R6024KNZC8
- Rohm Semiconductor
- NCH 600V 24A POWER MOSFET
- Transistors - FETs, MOSFETs - Single
- R6024KNZC8 Лист данных
- TO-3P-3 Full Pack
- TO-3P-3 Full Pack
-
Lead free / RoHS Compliant - 2446
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number R6024KNZC8 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description NCH 600V 24A POWER MOSFET |
| Package TO-3P-3 Full Pack |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-3P-3 Full Pack |
| Supplier Device Package TO-3PF |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 74W (Tc) |
| FET Type N-Channel |
| Drain to Source Voltage (Vdss) 600V |
| Current - Continuous Drain (Id) @ 25°C 24A (Tc) |
| Rds On (Max) @ Id, Vgs 165 mOhm @ 11.3A, 10V |
| Vgs(th) (Max) @ Id 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Vgs (Max) ±20V |
| Package_case TO-3P-3 Full Pack |
R6024KNZC8 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о R6024KNZC8 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
R6024KNZC8 сопутствующие товары
Комментарии
Rohm Semiconductor
R6035KNZ1C9
MOSFET N-CHANNEL 600V 35A TO247
RU1C002UNTCL
MOSFET N-CHANNEL 600V 35A TO247
RE1J002YNTCL
MOSFET N-CHANNEL 600V 35A TO247
RF4E110GNTR
MOSFET N-CHANNEL 600V 35A TO247
RUR020N02TL
MOSFET N-CHANNEL 600V 35A TO247
RQ5E040AJTCL
MOSFET N-CHANNEL 600V 35A TO247
RQ5L015SPTL
MOSFET N-CHANNEL 600V 35A TO247
RRR040P03TL
MOSFET N-CHANNEL 600V 35A TO247
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
