Rohm Semiconductor R6020ANZC8
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- R6020ANZC8
- Rohm Semiconductor
- MOSFET N-CH 600V 20A TO3PF
- Transistors - FETs, MOSFETs - Single
- R6020ANZC8 Лист данных
- TO-3P-3 Full Pack
- Tube
-
Lead free / RoHS Compliant - 4955
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number R6020ANZC8 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 600V 20A TO3PF |
| Package Tube |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-3P-3 Full Pack |
| Supplier Device Package TO-3PF |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 120W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 20A (Ta) |
| Rds On (Max) @ Id, Vgs 220mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 4.15V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-3P-3 Full Pack |
R6020ANZC8 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о R6020ANZC8 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
R6020ANZC8 сопутствующие товары
Комментарии
Rohm Semiconductor
R6012ANX
MOSFET N-CH 600V 12A TO220FM
R6008FNX
MOSFET N-CH 600V 12A TO220FM
RCX700N20
MOSFET N-CH 600V 12A TO220FM
R5009FNX
MOSFET N-CH 600V 12A TO220FM
R6015ENX
MOSFET N-CH 600V 12A TO220FM
R6024ENX
MOSFET N-CH 600V 12A TO220FM
R8010ANX
MOSFET N-CH 600V 12A TO220FM
R5021ANX
MOSFET N-CH 600V 12A TO220FM
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
