QS8K11TCR

Rohm Semiconductor QS8K11TCR

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • QS8K11TCR
  • Rohm Semiconductor
  • 4V DRIVE NCH+NCH MOSFET
  • Transistors - FETs, MOSFETs - Arrays
  • QS8K11TCR Лист данных
  • 8-SMD, Flat Lead
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/QS8K11TCRLead free / RoHS Compliant
  • 4296
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
QS8K11TCR
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Rohm Semiconductor
Description
4V DRIVE NCH+NCH MOSFET
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
TSMT8
Power - Max
1.5W
FET Type
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.5A
Rds On (Max) @ Id, Vgs
50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 10V
Package_case
8-SMD, Flat Lead

QS8K11TCR Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/QS8K11TCR

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/QS8K11TCR

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/QS8K11TCR

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о QS8K11TCR ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Rohm Semiconductor
Rohm Semiconductor,https://www.jinftry.ru/product_detail/QS8K11TCR
VT6K1T2CR,https://www.jinftry.ru/product_detail/QS8K11TCR
VT6K1T2CR

MOSFET 2N-CH 20V 0.1A VMT6

US6M2TR,https://www.jinftry.ru/product_detail/QS8K11TCR
US6M2TR

MOSFET 2N-CH 20V 0.1A VMT6

QS6K21TR,https://www.jinftry.ru/product_detail/QS8K11TCR
QS6K21TR

MOSFET 2N-CH 20V 0.1A VMT6

QS5K2TR,https://www.jinftry.ru/product_detail/QS8K11TCR
QS5K2TR

MOSFET 2N-CH 20V 0.1A VMT6

TT8J11TCR,https://www.jinftry.ru/product_detail/QS8K11TCR
TT8J11TCR

MOSFET 2N-CH 20V 0.1A VMT6

EM6K1T2R,https://www.jinftry.ru/product_detail/QS8K11TCR
EM6K1T2R

MOSFET 2N-CH 20V 0.1A VMT6

UM6K34NTCN,https://www.jinftry.ru/product_detail/QS8K11TCR
UM6K34NTCN

MOSFET 2N-CH 20V 0.1A VMT6

UM6K33NTN,https://www.jinftry.ru/product_detail/QS8K11TCR
UM6K33NTN

MOSFET 2N-CH 20V 0.1A VMT6

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001? "1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes. 1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP