Littelfuse Inc. QJ8025LH5TP
- QJ8025LH5TP
- Littelfuse Inc.
- TRIAC 800V 25A TO-220L
- Thyristors - TRIACs
- QJ8025LH5TP Лист данных
- TO-220-3 Full Pack, Isolated Tab
- Tube
- Lead free / RoHS Compliant
- 13489
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number QJ8025LH5TP |
Category Thyristors - TRIACs |
Manufacturer Littelfuse Inc. |
Description TRIAC 800V 25A TO-220L |
Package Tube |
Series QJxx25xHx |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package ITO-220AB |
Configuration Single |
Current - Hold (Ih) (Max) 50 mA |
Voltage - Off State 800 V |
Voltage - Gate Trigger (Vgt) (Max) 1.3 V |
Current - Gate Trigger (Igt) (Max) 50 mA |
Current - On State (It (RMS)) (Max) 25 A |
Current - Non Rep. Surge 50, 60Hz (Itsm) 208A, 250A |
Triac Type Alternistor - Snubberless |
Package_case TO-220-3 Full Pack, Isolated Tab |
QJ8025LH5TP Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о QJ8025LH5TP ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Littelfuse Inc.
QJ6025NH6RP
ALTERNISTOR TRIAC 25A TO263
QJ8025NH5RP
ALTERNISTOR TRIAC 25A TO263
QJ4025KH6TP
ALTERNISTOR TRIAC 25A TO263
Q6040KH6TP
ALTERNISTOR TRIAC 25A TO263
QJ4025JH6TP
ALTERNISTOR TRIAC 25A TO263
QJ6025KH6TP
ALTERNISTOR TRIAC 25A TO263
QJ6025JH6TP
ALTERNISTOR TRIAC 25A TO263
Q4040K5TP
ALTERNISTOR TRIAC 25A TO263
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
Fabrication of Littelfuse SP33R6 0.2PF 12KV TVS Diode
Fabrication of Littelfuse SP33R6 0.2PF 12KV TVS Diode
Littelfuse SP33R6 0.2PF 12kV TVS Diode Arrays are forward PN junction diodes fabricated using proprietary silicon technology. The Littelfuse family of diodes protects every I/O pin, providing a high level of protection for electronic equipment that may be damaged by destructive electrostatic discharge (ESD). This rugged diode is capable of safely absorbing repetitive ESD damage without performance degradation at the highest level specified i