Nexperia USA Inc. PXN8R3-30QLJ
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- PXN8R3-30QLJ
- Nexperia USA Inc.
- PXN8R3-30QL/SOT8002/MLPAK33
- Transistors - FETs, MOSFETs - Single
- PXN8R3-30QLJ Лист данных
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 4881
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number PXN8R3-30QLJ |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Nexperia USA Inc. |
| Description PXN8R3-30QL/SOT8002/MLPAK33 |
| Package Tape & Reel (TR) |
| Series TrenchMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package MLPAK33 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 11.4A (Ta), 31A (Tc) |
| Rds On (Max) @ Id, Vgs 8.3mOhm @ 11.4A, 10V |
| Vgs(th) (Max) @ Id 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 15.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerVDFN |
PXN8R3-30QLJ Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PXN8R3-30QLJ ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
PXN8R3-30QLJ сопутствующие товары
Комментарии
Nexperia USA Inc.
BUK9M11-40HX
MOSFET N-CH 40V 35A LFPAK33
BUK763R4-30,118
MOSFET N-CH 40V 35A LFPAK33
BUK7Y7R0-40HX
MOSFET N-CH 40V 35A LFPAK33
PSMN5R0-40MSHX
MOSFET N-CH 40V 35A LFPAK33
PSMN4R3-40MSHX
MOSFET N-CH 40V 35A LFPAK33
BUK7S1R5-40HJ
MOSFET N-CH 40V 35A LFPAK33
BUK7S1R2-40HJ
MOSFET N-CH 40V 35A LFPAK33
PSMN1R0-40SSHJ
MOSFET N-CH 40V 35A LFPAK33
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
Nexperia and electronic device suppliers produce automotive-grade GaN power modules
Nexperia and electronic device suppliers produce automotive-grade GaN power modules
Nexperia has signed an agreement with KyoceraAVX Components in Salzburg, Austria, to produce Gallium Nitride (GaN) automotive power modules. The goal of the agreement is to jointly develop GaN applications for electric vehicles based on new packaging technologies.
According to eeNews, this collaboration could meet the demands of higher efficiency, higher power density and lower system cost. Nexperia focuses
