Rohm Semiconductor PTZTE2518A
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- PTZTE2518A
- Rohm Semiconductor
- DIODE ZENER 18V 1W PMDS
- Diodes - Zener - Single
- PTZTE2518A Лист данных
- DO-214AC, SMA
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 4192
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number PTZTE2518A |
| Category Diodes - Zener - Single |
| Manufacturer Rohm Semiconductor |
| Description DIODE ZENER 18V 1W PMDS |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature - |
| Mounting Type Surface Mount |
| Package / Case DO-214AC, SMA |
| Supplier Device Package PMDS |
| Tolerance ±6% |
| Power - Max 1 W |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr 10 µA @ 13 V |
| Voltage - Zener (Nom) (Vz) 18 V |
| Impedance (Max) (Zzt) 12 Ohms |
| Package_case DO-214AC, SMA |
PTZTE2518A Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PTZTE2518A ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
PTZTE2518A сопутствующие товары
Комментарии
Rohm Semiconductor
UDZVTE-176.2B
DIODE ZENER 6.2V 200MW UMD2
UDZVTE-175.6B
DIODE ZENER 6.2V 200MW UMD2
UDZVTE-173.9B
DIODE ZENER 6.2V 200MW UMD2
UDZVTE-1718B
DIODE ZENER 6.2V 200MW UMD2
UDZSTE-173.6B
DIODE ZENER 6.2V 200MW UMD2
KDZVTR5.6B
DIODE ZENER 6.2V 200MW UMD2
KDZVTR5.1B
DIODE ZENER 6.2V 200MW UMD2
KDZVTR15B
DIODE ZENER 6.2V 200MW UMD2
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
