Nexperia USA Inc. PRMH13Z
- PRMH13Z
- Nexperia USA Inc.
- TRANS PREBIAS 2NPN 50V DFN1412-6
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- PRMH13Z Лист данных
- 6-XFDFN Exposed Pad
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 20769
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PRMH13Z |
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer Nexperia USA Inc. |
Description TRANS PREBIAS 2NPN 50V DFN1412-6 |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101 |
Mounting Type Surface Mount |
Package / Case 6-XFDFN Exposed Pad |
Supplier Device Package DFN1412-6 |
Power - Max 480mW |
Transistor Type 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V |
Frequency - Transition 230MHz |
Resistor - Base (R1) 4.7kOhms |
Resistor - Emitter Base (R2) 47kOhms |
Package_case 6-XFDFN Exposed Pad |
PRMH13Z Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PRMH13Z ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
PUMB10F
PUMB10/SOT363/SC-88
PUMH13F
PUMB10/SOT363/SC-88
PUMH17F
PUMB10/SOT363/SC-88
PUMH7F
PUMB10/SOT363/SC-88
PUMH10Z
PUMB10/SOT363/SC-88
PUMB2F
PUMB10/SOT363/SC-88
PUMH2F
PUMB10/SOT363/SC-88
PIMD3F
PUMB10/SOT363/SC-88
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time
NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time
Nexperia announced the first P-channel MOSFET series products encapsulated by LFPAK56 (Power-SO8). The new device complies with the AEC-Q101 standard and is suitable for automotive applications. It can be used as an ideal alternative product of DPAK MOSFET. On the basis of ensuring performance, the encapsulation area is reduced by more than 50%. The new series of products can be selected within the operating voltage range of 3