NXP USA Inc. PMCPB5530X
- PMCPB5530X
- NXP USA Inc.
- NOW NEXPERIA PMCPB5530X - SMALL
- Transistors - FETs, MOSFETs - Single
- PMCPB5530X Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 6185
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PMCPB5530X |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description NOW NEXPERIA PMCPB5530X - SMALL |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Technology - |
Power Dissipation (Max) - |
FET Type - |
FET Feature - |
Drain to Source Voltage (Vdss) - |
Current - Continuous Drain (Id) @ 25°C - |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case - |
PMCPB5530X Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PMCPB5530X ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
NXP USA Inc.
PSMN8R040PS127
MOSFET N-CH 40V 77A TO220AB
BUK662R7-55C
MOSFET N-CH 40V 77A TO220AB
PSMN2R6-60PSQ127
MOSFET N-CH 40V 77A TO220AB
PSMN3R5-80PS
MOSFET N-CH 40V 77A TO220AB
NOCATSTYPE
MOSFET N-CH 40V 77A TO220AB
PH5030ALS,115
MOSFET N-CH 40V 77A TO220AB
PH7030ALS,115
MOSFET N-CH 40V 77A TO220AB
PMV62XN,215
MOSFET N-CH 40V 77A TO220AB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
NXP N-AFE 8-Channel Analog Front-End IC
NXP N-AFE 8-Channel Analog Front-End IC
NXP N-AFE 8-Channel Analog Front End (AFE) IC is a highly configurable industrial-grade multi-channel general-purpose input AFE for high-precision measurement requirements. These devices integrate a low leakage, high voltage (HV) fast multiplexer, low offset/low drift programmable gain amplifier (PGA) and buffer, high data rate 24-bit Delta-Sigma analog-to-digital converter (ADC) and Low Drift Voltage Reference. The NAFE11388 and NAFE71388 ICs are equippe