Powerex Inc. PM25CL1B120
- PM25CL1B120
- Powerex Inc.
- MOD IPM 6-PAC L1 25A 1200V
- Power Driver Modules
- PM25CL1B120 Лист данных
- Power Module
- Bulk
- Lead free / RoHS Compliant
- 25449
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PM25CL1B120 |
Category Power Driver Modules |
Manufacturer Powerex Inc. |
Description MOD IPM 6-PAC L1 25A 1200V |
Package Bulk |
Series Intellimod™ |
Type IGBT |
Mounting Type Chassis Mount |
Package / Case Power Module |
Configuration 3 Phase |
Current 25 A |
Voltage 1.2 kV |
Voltage - Isolation 2500Vrms |
Package_case Power Module |
PM25CL1B120 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PM25CL1B120 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Powerex Inc.
PS22A74
MOD IPM 1200V 15A LARGE DIP
PS21965-4
MOD IPM 1200V 15A LARGE DIP
PS21964-4
MOD IPM 1200V 15A LARGE DIP
PS219B4-AS
MOD IPM 1200V 15A LARGE DIP
PS21A79
MOD IPM 1200V 15A LARGE DIP
PSS50S71F6
MOD IPM 1200V 15A LARGE DIP
PSS30S71F6
MOD IPM 1200V 15A LARGE DIP
PSS30S92F6-AG
MOD IPM 1200V 15A LARGE DIP
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.