Nexperia USA Inc. PHT6NQ10T,135
- PHT6NQ10T,135
- Nexperia USA Inc.
- MOSFET N-CH 100V 3A SOT223
- Transistors - FETs, MOSFETs - Single
- PHT6NQ10T,135 Лист данных
- TO-261-4, TO-261AA
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 28304
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PHT6NQ10T,135 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Nexperia USA Inc. |
Description MOSFET N-CH 100V 3A SOT223 |
Package Jinftry-Reel® |
Series TrenchMOS™ |
Operating Temperature -65°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-261-4, TO-261AA |
Supplier Device Package SOT-223 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 3A (Ta) |
Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-261-4, TO-261AA |
PHT6NQ10T,135 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PHT6NQ10T,135 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
PSMN2R0-30YL,115
MOSFET N-CH 30V 100A LFPAK56
PSMN075-100MSEX
MOSFET N-CH 30V 100A LFPAK56
PMCM650VNEZ
MOSFET N-CH 30V 100A LFPAK56
BUK7226-75A,118
MOSFET N-CH 30V 100A LFPAK56
PML260SN,118
MOSFET N-CH 30V 100A LFPAK56
PSMN2R6-40YS,115
MOSFET N-CH 30V 100A LFPAK56
BUK9209-40B,118
MOSFET N-CH 30V 100A LFPAK56
PSMN1R2-30YLC,115
MOSFET N-CH 30V 100A LFPAK56
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.