NXP USA Inc. PHPT60606PY115
- PHPT60606PY115
- NXP USA Inc.
- POWER BIPOLAR TRANSISTOR, PNP
- Transistors - Bipolar (BJT) - Single
- PHPT60606PY115 Лист данных
- -
- Tube
- Lead free / RoHS Compliant
- 4100
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PHPT60606PY115 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer NXP USA Inc. |
Description POWER BIPOLAR TRANSISTOR, PNP |
Package Tube |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Transistor Type - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Vce Saturation (Max) @ Ib, Ic - |
Current - Collector Cutoff (Max) - |
DC Current Gain (hFE) (Min) @ Ic, Vce - |
Frequency - Transition - |
Package_case - |
PHPT60606PY115 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PHPT60606PY115 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
NXP USA Inc.
PHPT61006NY115
POWER BIPOLAR TRANSISTOR NPN
PHPT60410PY115
POWER BIPOLAR TRANSISTOR NPN
PHPT60410NY115
POWER BIPOLAR TRANSISTOR NPN
BUK6218-40C
POWER BIPOLAR TRANSISTOR NPN
PBHV2160Z115
POWER BIPOLAR TRANSISTOR NPN
BFR505T115
POWER BIPOLAR TRANSISTOR NPN
PHPT60415PY115
POWER BIPOLAR TRANSISTOR NPN
PHPT61010PY115
POWER BIPOLAR TRANSISTOR NPN
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
NXP N-AFE 8-Channel Analog Front-End IC
NXP N-AFE 8-Channel Analog Front-End IC
NXP N-AFE 8-Channel Analog Front End (AFE) IC is a highly configurable industrial-grade multi-channel general-purpose input AFE for high-precision measurement requirements. These devices integrate a low leakage, high voltage (HV) fast multiplexer, low offset/low drift programmable gain amplifier (PGA) and buffer, high data rate 24-bit Delta-Sigma analog-to-digital converter (ADC) and Low Drift Voltage Reference. The NAFE11388 and NAFE71388 ICs are equippe