PHD18NQ10T,118

NXP USA Inc. PHD18NQ10T,118

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • PHD18NQ10T,118
  • NXP USA Inc.
  • MOSFET N-CH 100V 18A DPAK
  • Transistors - FETs, MOSFETs - Single
  • PHD18NQ10T,118 Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/PHD18NQ10T-118Lead free / RoHS Compliant
  • 8042
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
PHD18NQ10T,118
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 100V 18A DPAK
Package
Tape & Reel (TR)
Series
TrenchMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
79W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
633 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

PHD18NQ10T,118 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/PHD18NQ10T-118

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/PHD18NQ10T-118

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/PHD18NQ10T-118

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о PHD18NQ10T,118 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

NXP USA Inc.
NXP USA Inc.,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
BUK7524-55,127,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
BUK7524-55,127

MOSFET N-CH 55V 45A TO220AB

2N7002PM,315,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
2N7002PM,315

MOSFET N-CH 55V 45A TO220AB

PSMN035-100LS,115,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
PSMN035-100LS,115

MOSFET N-CH 55V 45A TO220AB

PSMN017-30LL,115,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
PSMN017-30LL,115

MOSFET N-CH 55V 45A TO220AB

BUK7Y54-75B,115,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
BUK7Y54-75B,115

MOSFET N-CH 55V 45A TO220AB

BUK7Y35-55B,115,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
BUK7Y35-55B,115

MOSFET N-CH 55V 45A TO220AB

PSMN014-60LS,115,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
PSMN014-60LS,115

MOSFET N-CH 55V 45A TO220AB

PSMN013-30LL,115,https://www.jinftry.ru/product_detail/PHD18NQ10T-118
PSMN013-30LL,115

MOSFET N-CH 55V 45A TO220AB

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

What is a Junction Diode? What are the types of junction diodes?

What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.

ON NTD2955G series packages and features are different

NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.

The pain of "lack of core" EV hurts the most

The pain of "lack of core" EV hurts the most "Lack of cores" is the biggest challenge currently facing the global automotive industry. Comparing the above figures, it is not difficult to imagine that hybrid and pure electric vehicles should be the hardest hit areas for "lack of cores". In this context, the Ministry of Industry and Information Technology guided the China Automotive Chip Industry Innovation Strategic Alliance and other institutions to launch the &quo
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP