NXP USA Inc. PH1955L,115
- PH1955L,115
- NXP USA Inc.
- MOSFET N-CH 55V 40A LFPAK56
- Transistors - FETs, MOSFETs - Single
- PH1955L,115 Лист данных
- SC-100, SOT-669
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 21282
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PH1955L,115 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 55V 40A LFPAK56 |
Package Cut Tape (CT) |
Series TrenchMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case SC-100, SOT-669 |
Supplier Device Package LFPAK56, Power-SO8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 75W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 55 V |
Current - Continuous Drain (Id) @ 25°C 40A (Tc) |
Rds On (Max) @ Id, Vgs 17.3mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 1992 pF @ 25 V |
Vgs (Max) ±15V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case SC-100, SOT-669 |
PH1955L,115 Гарантии
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