NXP Semiconductors(恩智浦半导体) PDTC115EM,315
- PDTC115EM,315
- NXP Semiconductors(恩智浦半导体)
- NOW NEXPERIA PDTC115EM - SMALL S
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- PDTC115EM,315 Лист данных
- SC-101, SOT-883
- Bulk
- Lead free / RoHS Compliant
- 3735
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PDTC115EM,315 |
Category Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer NXP Semiconductors(恩智浦半导体) |
Description NOW NEXPERIA PDTC115EM - SMALL S |
Package Bulk |
Series - |
Mounting Type Surface Mount |
Package / Case SC-101, SOT-883 |
Supplier Device Package DFN1006-3 |
Power - Max 250 mW |
Transistor Type NPN - Pre-Biased |
Current - Collector (Ic) (Max) 20 mA |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V |
Frequency - Transition - |
Resistor - Base (R1) 100 kOhms |
Resistor - Emitter Base (R2) 100 kOhms |
Package_case SC-101, SOT-883 |
PDTC115EM,315 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PDTC115EM,315 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
NXP Semiconductors(恩智浦半导体)
PDTA115EU,115
NEXPERIA PDTA115EU - SMALL SIGNA
PDTA114TMB,315
NEXPERIA PDTA115EU - SMALL SIGNA
PDTA114EMB,315
NEXPERIA PDTA115EU - SMALL SIGNA
PDTC143ZMB,315
NEXPERIA PDTA115EU - SMALL SIGNA
PDTC124EE,115
NEXPERIA PDTA115EU - SMALL SIGNA
PDTA114TE,115
NEXPERIA PDTA115EU - SMALL SIGNA
2PD601BRL,215
NEXPERIA PDTA115EU - SMALL SIGNA
BCW30,215
NEXPERIA PDTA115EU - SMALL SIGNA
What is a bipolar transistor and what is its operating mode
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
NXP uses MCUXpresso SEC tool and smart cards for secure manufacturing
NXP uses MCUXpresso SEC tool and smart cards for secure manufacturing
NXP offers solution with new smart card trusted provisioning capabilities
Original equipment manufacturers (OEMs) developing edge connectivity technologies need to consider their software intellectual property and their reputation as security product providers. Cost-effective production is often in direct conflict with protecting intellectual property and device certifications used in the cloud. NXP believes that secur