Nexperia USA Inc. PBSS8510PA,115
- PBSS8510PA,115
- Nexperia USA Inc.
- TRANS NPN 100V 5.2A SOT1061
- Transistors - Bipolar (BJT) - Single
- PBSS8510PA,115 Лист данных
- 3-PowerUDFN
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 4377
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PBSS8510PA,115 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Nexperia USA Inc. |
Description TRANS NPN 100V 5.2A SOT1061 |
Package Jinftry-Reel® |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-PowerUDFN |
Supplier Device Package 3-HUSON (2x2) |
Power - Max 2.1 W |
Transistor Type NPN |
Current - Collector (Ic) (Max) 5.2 A |
Voltage - Collector Emitter Breakdown (Max) 100 V |
Vce Saturation (Max) @ Ib, Ic 340mV @ 260mA, 5.2A |
Current - Collector Cutoff (Max) 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 95 @ 2A, 2V |
Frequency - Transition 150MHz |
Package_case 3-PowerUDFN |
PBSS8510PA,115 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PBSS8510PA,115 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
PBSS4630PA,115
TRANS NPN 30V 6A 3HUSON
PZT4401,115
TRANS NPN 30V 6A 3HUSON
PBSS5540X,135
TRANS NPN 30V 6A 3HUSON
PBSS5540ZF
TRANS NPN 30V 6A 3HUSON
BC858W,135
TRANS NPN 30V 6A 3HUSON
BC857CW,135
TRANS NPN 30V 6A 3HUSON
BC857AW,135
TRANS NPN 30V 6A 3HUSON
BC847AW,135
TRANS NPN 30V 6A 3HUSON
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
Nexperia Introduces New Level Shifter NXT4557GU
Nexperia Introduces New Level Shifter NXT4557GU
Low operating and shutdown currents help maximize phone battery life
Nexperia, a specialist in basic semiconductor devices, today announced the launch of new additions to its family of level translators: the NXT4557GU and NXT4556UP. The new device enables seamless connectivity between next-generation low-voltage mobile phone baseband processors and Subscriber Identity Module (SIM) cards. As processor geometries move toward the single-digit na