Nexperia USA Inc. PBSS4160V,115
- PBSS4160V,115
- Nexperia USA Inc.
- TRANS NPN 60V 0.9A SOT666
- Transistors - Bipolar (BJT) - Single
- PBSS4160V,115 Лист данных
- SOT-563, SOT-666
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 2829
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PBSS4160V,115 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Nexperia USA Inc. |
Description TRANS NPN 60V 0.9A SOT666 |
Package Cut Tape (CT) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package SOT-666 |
Power - Max 500 mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 900 mA |
Voltage - Collector Emitter Breakdown (Max) 60 V |
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A |
Current - Collector Cutoff (Max) 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V |
Frequency - Transition 220MHz |
Package_case SOT-563, SOT-666 |
PBSS4160V,115 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PBSS4160V,115 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
BCP53-16,135
TRANS PNP 80V 1A SOT223
PBSS2515MB,315
TRANS PNP 80V 1A SOT223
PBSS5160U,115
TRANS PNP 80V 1A SOT223
BSS63,215
TRANS PNP 80V 1A SOT223
BC847AMB,315
TRANS PNP 80V 1A SOT223
PBSS2515M,315
TRANS PNP 80V 1A SOT223
BCW70,215
TRANS PNP 80V 1A SOT223
BCW70,235
TRANS PNP 80V 1A SOT223
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time
NEXPERIA uses Power-SO8 packaged P-channel MOSFET for the first time
Nexperia announced the first P-channel MOSFET series products encapsulated by LFPAK56 (Power-SO8). The new device complies with the AEC-Q101 standard and is suitable for automotive applications. It can be used as an ideal alternative product of DPAK MOSFET. On the basis of ensuring performance, the encapsulation area is reduced by more than 50%. The new series of products can be selected within the operating voltage range of 3