Nexperia USA Inc. PBSS4130QA
- PBSS4130QA
- Nexperia USA Inc.
- TRANS NPN 30V 1A 3DFN
- Transistors - Bipolar (BJT) - Single
- PBSS4130QA Лист данных
- 3-XDFN Exposed Pad
- 3-XDFN Exposed Pad
- Lead free / RoHS Compliant
- 4013
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PBSS4130QA |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Nexperia USA Inc. |
Description TRANS NPN 30V 1A 3DFN |
Package 3-XDFN Exposed Pad |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-XDFN Exposed Pad |
Supplier Device Package DFN1010D-3 |
Power - Max 325mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 1A |
Voltage - Collector Emitter Breakdown (Max) 30V |
Vce Saturation (Max) @ Ib, Ic 245mV @ 50mA, 1A |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V |
Frequency - Transition 190MHz |
Package_case 3-XDFN Exposed Pad |
PBSS4130QA Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PBSS4130QA ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Nexperia USA Inc.
PBSS5230QAZ
TRANS PNP 30V 2A DFN1010D-3
PBSS4230QAZ
TRANS PNP 30V 2A DFN1010D-3
PBSS4230QA
TRANS PNP 30V 2A DFN1010D-3
PBSS4240XX
TRANS PNP 30V 2A DFN1010D-3
BC68PA,115
TRANS PNP 30V 2A DFN1010D-3
BC55PA,115
TRANS PNP 30V 2A DFN1010D-3
BCP55-16F
TRANS PNP 30V 2A DFN1010D-3
BCX53-16,146
TRANS PNP 30V 2A DFN1010D-3
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Nexperia Introduces New Level Shifter NXT4557GU
Nexperia Introduces New Level Shifter NXT4557GU
Low operating and shutdown currents help maximize phone battery life
Nexperia, a specialist in basic semiconductor devices, today announced the launch of new additions to its family of level translators: the NXT4557GU and NXT4556UP. The new device enables seamless connectivity between next-generation low-voltage mobile phone baseband processors and Subscriber Identity Module (SIM) cards. As processor geometries move toward the single-digit na