PBSM5240PFH,115

Nexperia USA Inc. PBSM5240PFH,115

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • PBSM5240PFH,115
  • Nexperia USA Inc.
  • TRANS PNP/N CH 40V 1.8A 6HUSON
  • Transistors - Special Purpose
  • PBSM5240PFH,115 Лист данных
  • 6-UFDFN Exposed Pad
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/PBSM5240PFH-115Lead free / RoHS Compliant
  • 3129
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
PBSM5240PFH,115
Category
Transistors - Special Purpose
Manufacturer
Nexperia USA Inc.
Description
TRANS PNP/N CH 40V 1.8A 6HUSON
Package
Tape & Reel (TR)
Series
-
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
Applications
General Purpose
Transistor Type
PNP, N-Channel
Voltage - Rated
40V PNP, 30V N-Channel
Current Rating (Amps)
1.8A PNP, 660mA N-Channel
Package_case
6-UFDFN Exposed Pad

PBSM5240PFH,115 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/PBSM5240PFH-115

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/PBSM5240PFH-115

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/PBSM5240PFH-115

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о PBSM5240PFH,115 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Nexperia USA Inc.

PMC85XP,115,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
PMC85XP,115

MOSFET NPN/P CH 30V 2.6A 6HUSON

PMXB43UNE,147,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
PMXB43UNE,147

MOSFET NPN/P CH 30V 2.6A 6HUSON

PMV65XPEA,215,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
PMV65XPEA,215

MOSFET NPN/P CH 30V 2.6A 6HUSON

PMV50ENEA,215,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
PMV50ENEA,215

MOSFET NPN/P CH 30V 2.6A 6HUSON

PMN27XPEA,115,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
PMN27XPEA,115

MOSFET NPN/P CH 30V 2.6A 6HUSON

BUK98150-55/CU,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
BUK98150-55/CU

MOSFET NPN/P CH 30V 2.6A 6HUSON

BUK9K13-40HX,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
BUK9K13-40HX

MOSFET NPN/P CH 30V 2.6A 6HUSON

BUK9K25-40RAX,https://www.jinftry.ru/product_detail/PBSM5240PFH-115
BUK9K25-40RAX

MOSFET NPN/P CH 30V 2.6A 6HUSON

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP