Diodes Incorporated PBPC802
- PBPC802
- Diodes Incorporated
- BRIDGE RECT 1P 100V 6A PBPC-8
- Diodes - Bridge Rectifiers
- PBPC802 Лист данных
- 4-Square, PBPC-8
- Bulk
- Lead free / RoHS Compliant
- 4779
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number PBPC802 |
Category Diodes - Bridge Rectifiers |
Manufacturer Diodes Incorporated |
Description BRIDGE RECT 1P 100V 6A PBPC-8 |
Package Bulk |
Series - |
Operating Temperature -65°C ~ 125°C (TJ) |
Mounting Type Through Hole |
Package / Case 4-Square, PBPC-8 |
Supplier Device Package PBPC-8 |
Technology Standard |
Diode Type Single Phase |
Voltage - Peak Reverse (Max) 100 V |
Current - Average Rectified (Io) 6 A |
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 4 A |
Current - Reverse Leakage @ Vr 10 µA @ 100 V |
Package_case 4-Square, PBPC-8 |
PBPC802 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о PBPC802 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Diodes Incorporated
PBPC607
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
PBPC606
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
GBPC3508W
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
GBPC3506W
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
GBPC3504W
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
GBPC3501W
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
GBPC35005W
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
GBPC35005
BRIDGE RECT 1PHASE 1KV 4A PBPC-6
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
74LVC1GxxQ LVC Logic Device IC
74LVC1GxxQ LVC Logic Device IC
Diodes 74LVC1GxxQ Automotive Compliant Single-Gate LVC Logic Device Family
Diodes 74LVC1GxxQ LVC Logic Device Image Diodes Incorporated 74LVC1GxxQ Logic Device IC Family Single-Gate Logic Devices are automotive compliant and can directly replace automotive LVC logic IC products. These devices are AEC-Q100 Grade 1 qualified, support ambient temperatures up to +125°C, are manufactured in an IATF16949 certified facility, and support Production Part Approval Process