STMicroelectronics P0111MN 5AA4
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- P0111MN 5AA4
- STMicroelectronics
- SCR 600V 800MA SOT223
- Thyristors - SCRs
- P0111MN 5AA4 Лист данных
- TO-261-4, TO-261AA
- Tube
-
Lead free / RoHS Compliant - 16855
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number P0111MN 5AA4 |
| Category Thyristors - SCRs |
| Manufacturer STMicroelectronics |
| Description SCR 600V 800MA SOT223 |
| Package Tube |
| Series - |
| Operating Temperature -40°C ~ 125°C |
| Mounting Type Surface Mount |
| Package / Case TO-261-4, TO-261AA |
| Supplier Device Package SOT-223 |
| Current - Hold (Ih) (Max) 5 mA |
| Voltage - Off State 600 V |
| Voltage - Gate Trigger (Vgt) (Max) 800 mV |
| Current - Gate Trigger (Igt) (Max) 25 µA |
| Voltage - On State (Vtm) (Max) 1.95 V |
| Current - On State (It (AV)) (Max) 500 mA |
| Current - On State (It (RMS)) (Max) 800 mA |
| Current - Off State (Max) 10 µA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) 7A, 8A |
| SCR Type Sensitive Gate |
| Package_case TO-261-4, TO-261AA |
P0111MN 5AA4 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о P0111MN 5AA4 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
P0111MN 5AA4 сопутствующие товары
Комментарии
STMicroelectronics
X0403DF 1AA2
SCR 400V 1.35A TO202-3
P0109AL 5AA4
SCR 400V 1.35A TO202-3
P0102AL 5AA4
SCR 400V 1.35A TO202-3
X0205NA 1BA2
SCR 400V 1.35A TO202-3
TN1215-600G-TR
SCR 400V 1.35A TO202-3
TS110-8A1
SCR 400V 1.35A TO202-3
TXN692RG
SCR 400V 1.35A TO202-3
P0102MA1AA3
SCR 400V 1.35A TO202-3
STM32F103C6T6 A powerful microcontroller ushering in a new chapter in embedded systems
STM32F103C6T6: A powerful microcontroller ushering in a new chapter in embedded systems
In today's digital era, microcontrollers (MCUs), as the core of embedded systems, play a pivotal role.
Among them, the STM32F103C6T6 microcontroller has been favored by developers due to its excellent performance, rich peripheral interfaces and high degree of integration. This article will provide an overview of the STM32F103C6T6, discussing its features, advantages, application scenarios and more
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
ST released a number of new MEMS sensors, breaking through the performance power ratio and unlocking the new field of wearable applications
ST released a number of new MEMS sensors, breaking through the performance power ratio and unlocking the new field of wearable applications
218g 888 • Source: Contributed by the manufacturer • Author: STF Semiconductor • 2022-06-08 14:43 • 1924 readings
0
STC will soon release a series of new sensors with higher performance to power ratio. LSM6DSV16X is the latest member of MEMS inertial sensor with machine learning core, which has higher accuracy and lower power consumption. In addition, Qva
ST Microelectronics M95P32 ultra-low power 32Mbit SPI page EEPROM
ST Microelectronics M95P32 ultra-low power 32Mbit SPI page EEPROM
STMicroelectronics M95P32 ultra-low power 32Mbit SPI Page EEPROM is optimized for mobile and wearable design. The M95P32 32Mbit SPI Page EEPROM has a rich feature set, ultra-low power consumption and high memory density. The device combines the patented e-STM 40nm nonvolatile memory (NVM) cell technology with intelligent page architecture, and combines the advantages of high memory density of firmware, byte flexibility and high d
