ON Semiconductor NXH50C120L2C2ES1G
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- NXH50C120L2C2ES1G
- ON Semiconductor
- IGBT MOD 1200V 50A 26DIP
- Transistors - IGBTs - Modules
- NXH50C120L2C2ES1G Лист данных
- 26-PowerDIP Module (1.199\", 47.20mm)
- Bulk
-
Lead free / RoHS Compliant - 24681
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number NXH50C120L2C2ES1G |
| Category Transistors - IGBTs - Modules |
| Manufacturer ON Semiconductor |
| Description IGBT MOD 1200V 50A 26DIP |
| Package Bulk |
| Series - |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case 26-PowerDIP Module (1.199\", 47.20mm) |
| Supplier Device Package 26-DIP |
| Power - Max 20 mW |
| Configuration Three Phase Inverter with Brake |
| Current - Collector (Ic) (Max) 50 A |
| Voltage - Collector Emitter Breakdown (Max) 1200 V |
| Current - Collector Cutoff (Max) 250 µA |
| IGBT Type - |
| Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A |
| Input Capacitance (Cies) @ Vce 11.89 nF @ 20 V |
| Input Three Phase Bridge Rectifier |
| NTC Thermistor Yes |
| Package_case 26-PowerDIP Module (1.199\", 47.20mm) |
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