ON Semiconductor NVMYS2D2N06CLTWG
- NVMYS2D2N06CLTWG
- ON Semiconductor
- MOSFET N-CH 60V 31A/185A LFPAK4
- Transistors - FETs, MOSFETs - Single
- NVMYS2D2N06CLTWG Лист данных
- SOT-1023, 4-LFPAK
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 21265
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number NVMYS2D2N06CLTWG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 60V 31A/185A LFPAK4 |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-1023, 4-LFPAK |
Supplier Device Package LFPAK4 (5x6) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.9W (Ta), 134W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 185A (Tc) |
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 2V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case SOT-1023, 4-LFPAK |
NVMYS2D2N06CLTWG Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NVMYS2D2N06CLTWG ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
NVMFS6H824NLWFT1G
MOSFET N-CH 80V 20A/110A 5DFN
NTMYS2D9N04CLTWG
MOSFET N-CH 80V 20A/110A 5DFN
FCP600N65S3R0
MOSFET N-CH 80V 20A/110A 5DFN
NTMYS3D3N06CLTWG
MOSFET N-CH 80V 20A/110A 5DFN
NTMFS6H801NLT1G
MOSFET N-CH 80V 20A/110A 5DFN
NTMFS0D9N03CGT1G
MOSFET N-CH 80V 20A/110A 5DFN
NTMYS4D1N06CLTWG
MOSFET N-CH 80V 20A/110A 5DFN
FCP360N65S3R0
MOSFET N-CH 80V 20A/110A 5DFN
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic