ON Semiconductor NVMFS5C442NLWFT1G
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- NVMFS5C442NLWFT1G
- ON Semiconductor
- MOSFET N-CH 40V 27A/127A 5DFN
- Transistors - FETs, MOSFETs - Single
- NVMFS5C442NLWFT1G Лист данных
- 8-PowerTDFN, 5 Leads
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 27147
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number NVMFS5C442NLWFT1G |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 40V 27A/127A 5DFN |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN, 5 Leads |
| Supplier Device Package 5-DFN (5x6) (8-SOFL) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.7W (Ta), 83W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 27A (Ta), 127A (Tc) |
| Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerTDFN, 5 Leads |
NVMFS5C442NLWFT1G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NVMFS5C442NLWFT1G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
NVMFS5C442NLWFT1G сопутствующие товары
Комментарии
ON Semiconductor
NTMFS5C430NLT3G
MOSFET N-CH 40V 200A 5DFN
FQPF10N60C
MOSFET N-CH 40V 200A 5DFN
NVMFS5832NLWFT1G
MOSFET N-CH 40V 200A 5DFN
FQP6N80C
MOSFET N-CH 40V 200A 5DFN
NTBV5605T4G
MOSFET N-CH 40V 200A 5DFN
NVMFS5C423NLWFAFT1G
MOSFET N-CH 40V 200A 5DFN
NVMFS5C423NLWFT1G
MOSFET N-CH 40V 200A 5DFN
NTMFS4931NT1G
MOSFET N-CH 40V 200A 5DFN
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
