ON Semiconductor NVMFS5C442NLAFT1G
- NVMFS5C442NLAFT1G
- ON Semiconductor
- MOSFET N-CH 40V 29A/130A 5DFN
- Transistors - FETs, MOSFETs - Single
- NVMFS5C442NLAFT1G Лист данных
- 8-PowerTDFN, 5 Leads
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1358
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number NVMFS5C442NLAFT1G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 40V 29A/130A 5DFN |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN, 5 Leads |
Supplier Device Package 5-DFN (5x6) (8-SOFL) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.7W (Ta), 83W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 130A (Tc) |
Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerTDFN, 5 Leads |
NVMFS5C442NLAFT1G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NVMFS5C442NLAFT1G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
FDMS2D4N03S
MOSFET N-CH 30V 163A 8PQFN
NVMFS5C646NLAFT3G
MOSFET N-CH 30V 163A 8PQFN
NVMFS5C646NLT3G
MOSFET N-CH 30V 163A 8PQFN
NVMFS5C442NAFT3G
MOSFET N-CH 30V 163A 8PQFN
NVMFS5C442NT3G
MOSFET N-CH 30V 163A 8PQFN
ATP108-TL-H
MOSFET N-CH 30V 163A 8PQFN
NVMFS5C670NLWFT1G
MOSFET N-CH 30V 163A 8PQFN
NTMFS5C442NLTT3G
MOSFET N-CH 30V 163A 8PQFN
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.