NVMFD6H846NLT1G

ON Semiconductor NVMFD6H846NLT1G

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  • NVMFD6H846NLT1G
  • ON Semiconductor
  • MOSFET - POWER, DUAL N-CHANNEL,
  • Transistors - FETs, MOSFETs - Arrays
  • NVMFD6H846NLT1G Лист данных
  • 8-PowerTDFN
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/NVMFD6H846NLT1GLead free / RoHS Compliant
  • 10429
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
NVMFD6H846NLT1G
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
ON Semiconductor
Description
MOSFET - POWER, DUAL N-CHANNEL,
Package
Cut Tape (CT)
Series
Automotive, AEC-Q101
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Power - Max
3.2W (Ta), 34W (Tc)
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs
15mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 40V
Package_case
8-PowerTDFN

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