NVMFD016N06CT1G

ON Semiconductor NVMFD016N06CT1G

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • NVMFD016N06CT1G
  • ON Semiconductor
  • MOSFET N-CH 60V 8DFN 5X6
  • Transistors - FETs, MOSFETs - Arrays
  • NVMFD016N06CT1G Лист данных
  • 8-PowerTDFN
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/NVMFD016N06CT1GLead free / RoHS Compliant
  • 3533
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
NVMFD016N06CT1G
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 60V 8DFN 5X6
Package
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Power - Max
3.1W (Ta), 36W (Tc)
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs
16.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
6.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
489pF @ 30V
Package_case
8-PowerTDFN

NVMFD016N06CT1G Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о NVMFD016N06CT1G ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

ON Semiconductor
ON Semiconductor,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NVMFWD020N06CT1G,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NVMFWD020N06CT1G

MOSFET N-CH DUAL 60V SO8FL

NVMFD6H846NLWFT1G,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NVMFD6H846NLWFT1G

MOSFET N-CH DUAL 60V SO8FL

NTMFD6H846NLT1G,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NTMFD6H846NLT1G

MOSFET N-CH DUAL 60V SO8FL

NTMFD2D4N03P8,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NTMFD2D4N03P8

MOSFET N-CH DUAL 60V SO8FL

NVMFWD016N06CT1G,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NVMFWD016N06CT1G

MOSFET N-CH DUAL 60V SO8FL

EFC4C012NLTDG,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
EFC4C012NLTDG

MOSFET N-CH DUAL 60V SO8FL

NVMFD5C668NLWFT1G,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NVMFD5C668NLWFT1G

MOSFET N-CH DUAL 60V SO8FL

NTMFD5C680NLT1G,https://www.jinftry.ru/product_detail/NVMFD016N06CT1G
NTMFD5C680NLT1G

MOSFET N-CH DUAL 60V SO8FL

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

What is a Junction Diode? What are the types of junction diodes?

What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.

The latest 2N3055 transistor datasheet, application, and price analysis in 2023

2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.

Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series

FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A. The following are the IGBT module series models: SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP