NTMFS4983NFT3G

ON Semiconductor NTMFS4983NFT3G

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • NTMFS4983NFT3G
  • ON Semiconductor
  • MOSFET N-CH 30V 22A/106A 5DFN
  • Transistors - FETs, MOSFETs - Single
  • NTMFS4983NFT3G Лист данных
  • 8-PowerTDFN, 5 Leads
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/NTMFS4983NFT3GLead free / RoHS Compliant
  • 1794
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
NTMFS4983NFT3G
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 30V 22A/106A 5DFN
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.7W (Ta), 38W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs
2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
47.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3250 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerTDFN, 5 Leads

NTMFS4983NFT3G Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о NTMFS4983NFT3G ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

ON Semiconductor
ON Semiconductor,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
SFT1452-W,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
SFT1452-W

MOSFET N-CH 250V 3A IPAK/TP

NTLUS3A18PZCTCG,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
NTLUS3A18PZCTCG

MOSFET N-CH 250V 3A IPAK/TP

NTLUS3A18PZTBG,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
NTLUS3A18PZTBG

MOSFET N-CH 250V 3A IPAK/TP

NTMFS4927NCT3G,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
NTMFS4927NCT3G

MOSFET N-CH 250V 3A IPAK/TP

NTMFS4927NCT1G,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
NTMFS4927NCT1G

MOSFET N-CH 250V 3A IPAK/TP

NTLUS3A90PZTBG,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
NTLUS3A90PZTBG

MOSFET N-CH 250V 3A IPAK/TP

NTLUF4189NZTAG,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
NTLUF4189NZTAG

MOSFET N-CH 250V 3A IPAK/TP

NTMFS4C09NBT1G,https://www.jinftry.ru/product_detail/NTMFS4983NFT3G
NTMFS4C09NBT1G

MOSFET N-CH 250V 3A IPAK/TP

battery charger

Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

 ON Ethernet Surge Protection Solutions

Ethernet Surge Protection Solutions We're using Gigabit Ethernet, or at least 100M Fast Ethernet over hundreds of meters. Run miles of cables in the walls of our work buildings or their ceilings or other hidden spaces. We use Power over Ethernet (PoE) to power and communicate with devices on rooftops, kiosks, light poles, and even communication towers. When your boss tells you Ethernet to replace the IEEE-488 bus link in the factory, he probably doesn't understand the inherent robustness and
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP