ON Semiconductor NTMFS4934NT1G
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- NTMFS4934NT1G
- ON Semiconductor
- MOSFET N-CH 30V 17.1A/147A 5DFN
- Transistors - FETs, MOSFETs - Single
- NTMFS4934NT1G Лист данных
- 8-PowerTDFN, 5 Leads
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 18010
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number NTMFS4934NT1G |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 30V 17.1A/147A 5DFN |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN, 5 Leads |
| Supplier Device Package 5-DFN (5x6) (8-SOFL) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 930mW (Ta), 69.44W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 17.1A (Ta), 147A (Tc) |
| Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 5505 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerTDFN, 5 Leads |
NTMFS4934NT1G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NTMFS4934NT1G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
NTMFS4934NT1G сопутствующие товары
Комментарии
ON Semiconductor
FDMS86104
MOSFET N-CH 100V 7A/16A 8PQFN
FDPF8N60ZUT
MOSFET N-CH 100V 7A/16A 8PQFN
FDMC86248
MOSFET N-CH 100V 7A/16A 8PQFN
FDMC012N03
MOSFET N-CH 100V 7A/16A 8PQFN
FCPF1300N80Z
MOSFET N-CH 100V 7A/16A 8PQFN
FDMC86340
MOSFET N-CH 100V 7A/16A 8PQFN
FDMS86163P
MOSFET N-CH 100V 7A/16A 8PQFN
FDP42AN15A0
MOSFET N-CH 100V 7A/16A 8PQFN
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor, a leader in semiconductors for smart power and sensing technologies, recently launched the 1200V SPM31 Intelligent Power Module (IPM) using new seventh-generation insulated gate bipolar transistor (IGBT) technology. The SPM31 IPM excels in energy efficiency, size and power density compared to other leading solutions on the market, reducing overall system cost. These IPMs integrate
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
