ON Semiconductor NTLJD3115PT1G
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- NTLJD3115PT1G
- ON Semiconductor
- MOSFET 2P-CH 20V 2.3A 6-WDFN
- Transistors - FETs, MOSFETs - Arrays
- NTLJD3115PT1G Лист данных
- 6-WDFN Exposed Pad
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2691
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number NTLJD3115PT1G |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer ON Semiconductor |
| Description MOSFET 2P-CH 20V 2.3A 6-WDFN |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 6-WDFN Exposed Pad |
| Supplier Device Package 6-WDFN (2x2) |
| Power - Max 710mW |
| FET Type 2 P-Channel (Dual) |
| FET Feature Logic Level Gate |
| Drain to Source Voltage (Vdss) 20V |
| Current - Continuous Drain (Id) @ 25°C 2.3A |
| Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds 531pF @ 10V |
| Package_case 6-WDFN Exposed Pad |
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