NTE Electronics, Inc NTE70
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- NTE70
- NTE Electronics, Inc
- TRANS NPN 150V 20A TO63
- Transistors - Bipolar (BJT) - Single
- NTE70 Лист данных
- TO-211MB, TO-63-4, Stud
- Bag
-
Lead free / RoHS Compliant - 29098
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number NTE70 |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer NTE Electronics, Inc |
| Description TRANS NPN 150V 20A TO63 |
| Package Bag |
| Series - |
| Operating Temperature -65°C ~ 200°C (TJ) |
| Mounting Type Stud Mount |
| Package / Case TO-211MB, TO-63-4, Stud |
| Supplier Device Package TO-63 |
| Power - Max 250 W |
| Transistor Type NPN |
| Current - Collector (Ic) (Max) 20 A |
| Voltage - Collector Emitter Breakdown (Max) 150 V |
| Vce Saturation (Max) @ Ib, Ic 3V @ 10A, 50A |
| Current - Collector Cutoff (Max) 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20A, 4V |
| Frequency - Transition - |
| Package_case TO-211MB, TO-63-4, Stud |
NTE70 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NTE70 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
NTE70 сопутствующие товары
Комментарии
NTE Electronics, Inc
NTE123A-100
TRANS NPN 40V 800MA TO18 100PK
NTE126A
TRANS NPN 40V 800MA TO18 100PK
NTE103
TRANS NPN 40V 800MA TO18 100PK
NTE2396A
TRANS NPN 40V 800MA TO18 100PK
NTE455
TRANS NPN 40V 800MA TO18 100PK
NTE2379
TRANS NPN 40V 800MA TO18 100PK
NTE2987
TRANS NPN 40V 800MA TO18 100PK
NTE2382
TRANS NPN 40V 800MA TO18 100PK
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
