NTE Electronics, Inc NTE5327W
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- NTE5327W
- NTE Electronics, Inc
- R-SI BRIDGE 800V 25A
- Diodes - Bridge Rectifiers
- NTE5327W Лист данных
- 4-Square
- Bag
-
Lead free / RoHS Compliant - 4139
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number NTE5327W |
| Category Diodes - Bridge Rectifiers |
| Manufacturer NTE Electronics, Inc |
| Description R-SI BRIDGE 800V 25A |
| Package Bag |
| Series - |
| Operating Temperature -55°C ~ 125°C (TJ) |
| Mounting Type Through Hole |
| Package / Case 4-Square |
| Supplier Device Package - |
| Technology Standard |
| Diode Type Single Phase |
| Voltage - Peak Reverse (Max) 800 V |
| Current - Average Rectified (Io) 25 A |
| Voltage - Forward (Vf) (Max) @ If 1.2 V @ 12.5 A |
| Current - Reverse Leakage @ Vr 10 µA @ 800 V |
| Package_case 4-Square |
NTE5327W Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NTE5327W ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
NTE5327W сопутствующие товары
Комментарии
NTE Electronics, Inc
NTE5741
R-3 PHASE BRIDGE 1600V 30
NTE2332
R-3 PHASE BRIDGE 1600V 30
NTE2334
R-3 PHASE BRIDGE 1600V 30
NTE5400
R-3 PHASE BRIDGE 1600V 30
NTE5453
R-3 PHASE BRIDGE 1600V 30
NTE5401
R-3 PHASE BRIDGE 1600V 30
NTE5402
R-3 PHASE BRIDGE 1600V 30
NTE5454
R-3 PHASE BRIDGE 1600V 30
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
