NTE2380

NTE Electronics, Inc NTE2380

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • NTE2380
  • NTE Electronics, Inc
  • MOSFET N-CHANNEL 500V 2.5A TO220
  • Transistors - FETs, MOSFETs - Single
  • NTE2380 Лист данных
  • TO-220-3
  • Bag
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/NTE2380Lead free / RoHS Compliant
  • 4848
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
NTE2380
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NTE Electronics, Inc
Description
MOSFET N-CHANNEL 500V 2.5A TO220
Package
Bag
Series
-
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
40W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Rds On (Max) @ Id, Vgs
3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

NTE2380 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/NTE2380

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/NTE2380

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/NTE2380

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о NTE2380 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

NTE Electronics, Inc

NTE2378,https://www.jinftry.ru/product_detail/NTE2380
NTE2378

MOSFET N-CHANNEL 900V 5A TO3P

NTE2933,https://www.jinftry.ru/product_detail/NTE2380
NTE2933

MOSFET N-CHANNEL 900V 5A TO3P

NTE2373,https://www.jinftry.ru/product_detail/NTE2380
NTE2373

MOSFET N-CHANNEL 900V 5A TO3P

NTE2385,https://www.jinftry.ru/product_detail/NTE2380
NTE2385

MOSFET N-CHANNEL 900V 5A TO3P

NTE2934,https://www.jinftry.ru/product_detail/NTE2380
NTE2934

MOSFET N-CHANNEL 900V 5A TO3P

NTE2389,https://www.jinftry.ru/product_detail/NTE2380
NTE2389

MOSFET N-CHANNEL 900V 5A TO3P

NTE2388,https://www.jinftry.ru/product_detail/NTE2380
NTE2388

MOSFET N-CHANNEL 900V 5A TO3P

NTE2932,https://www.jinftry.ru/product_detail/NTE2380
NTE2932

MOSFET N-CHANNEL 900V 5A TO3P

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP