Renesas Electronics America Inc NP80N055PDG-E1B-AY
- NP80N055PDG-E1B-AY
- Renesas Electronics America Inc
- MOSFET N-CH 55V 80A TO263
- Transistors - FETs, MOSFETs - Single
- NP80N055PDG-E1B-AY Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
- Lead free / RoHS Compliant
- 998
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number NP80N055PDG-E1B-AY |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Renesas Electronics America Inc |
Description MOSFET N-CH 55V 80A TO263 |
Package Bulk |
Series - |
Operating Temperature 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.8W (Ta), 115W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 55 V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 6.6mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 6.9 pF @ 25 V |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
NP80N055PDG-E1B-AY Гарантии
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