Renesas Electronics America Inc NP80N04NDG-S18-AY
- NP80N04NDG-S18-AY
- Renesas Electronics America Inc
- MOSFET N-CH 40V 80A TO262
- Transistors - FETs, MOSFETs - Single
- NP80N04NDG-S18-AY Лист данных
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Tube
- Lead free / RoHS Compliant
- 27267
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number NP80N04NDG-S18-AY |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Renesas Electronics America Inc |
Description MOSFET N-CH 40V 80A TO262 |
Package Tube |
Series - |
Operating Temperature 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package TO-262 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.8W (Ta), 115W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 4.8mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 6.9 pF @ 25 V |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
NP80N04NDG-S18-AY Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NP80N04NDG-S18-AY ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Renesas Electronics America Inc
2SJ302-AZ
P-CHANNEL POWER MOSFET
RJK0301DPB-00#J0
P-CHANNEL POWER MOSFET
2SJ471-E
P-CHANNEL POWER MOSFET
2SK3900-ZP-E1-AZ
P-CHANNEL POWER MOSFET
HAT2165N-EL-E
P-CHANNEL POWER MOSFET
2SK3354-Z-E1
P-CHANNEL POWER MOSFET
2SK1313STR-E
P-CHANNEL POWER MOSFET
2SK1313S-E
P-CHANNEL POWER MOSFET
Comparator performance and application and working principle
Comparators principle Comparators Performance indexComparators sort Zero-crossing voltage comparator: A typical amplitude comparison circuit, its circuit diagram and transmission characteristic curve are shown.
Voltage comparator: The voltage comparator is obtained by changing an input of the zero-crossing comparator from ground to a fixed voltage value.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Renesas Electronics Introduces New ASIL B Compliant Power Management IC-RAA271082, Ideal for Automotive Camera Applications
Renesas Electronics Introduces New ASIL B Compliant Power Management IC-RAA271082, Ideal for Automotive Camera Applications
The highly integrated RAA271082 PMIC complements Renesas' award-winning AHL technology,
Flexibility to support MCUs for safety-related applications
Beijing, China – Renesas Electronics, a global semiconductor solutions provider, today announced the launch of the RAA271082, an innovative automotive-grade power management IC for next-generation automotive camera
Renesas launches SOTB process embedded flash memory low-power technology for energy harvesting and battery-free power supply
Renesas Electronics presented the test results at the 2019 VLSI and Circuit Technology Symposium (June 9-14, 2019) held in Kyoto, Japan on June 12.
The new SOTB-based technology has been used in the rissa R7F0E embedded controller, which is specifically designed for energy harvesting applications. Renesas’ unique SOTB technology significantly reduces operating and standby power consumption. Generally speaking, the power consumption in these two states increases and decreases each other: that