NGTB50N60S1WG

ON Semiconductor NGTB50N60S1WG

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • NGTB50N60S1WG
  • ON Semiconductor
  • IGBT 50A 600V TO-247
  • Transistors - IGBTs - Single
  • NGTB50N60S1WG Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/NGTB50N60S1WGLead free / RoHS Compliant
  • 1470
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
NGTB50N60S1WG
Category
Transistors - IGBTs - Single
Manufacturer
ON Semiconductor
Description
IGBT 50A 600V TO-247
Package
Tube
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Power - Max
417 W
Input Type
Standard
Reverse Recovery Time (trr)
94 ns
Current - Collector (Ic) (Max)
100 A
Voltage - Collector Emitter Breakdown (Max)
600 V
IGBT Type
Trench
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
Gate Charge
220 nC
Td (on/off) @ 25°C
100ns/237ns
Test Condition
400V, 50A, 10Ohm, 15V
Current - Collector Pulsed (Icm)
200 A
Switching Energy
1.5mJ (on), 460µJ (off)
Package_case
TO-247-3

NGTB50N60S1WG Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/NGTB50N60S1WG

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/NGTB50N60S1WG

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/NGTB50N60S1WG

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о NGTB50N60S1WG ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

ON Semiconductor
ON Semiconductor,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
FGA60N60UFDTU,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
FGA60N60UFDTU

IGBT 600V 120A 298W TO3P

NGTB40N60FLWG,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
NGTB40N60FLWG

IGBT 600V 120A 298W TO3P

NGTB75N65FL2WAG,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
NGTB75N65FL2WAG

IGBT 600V 120A 298W TO3P

FGH75T65SQDTL4,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
FGH75T65SQDTL4

IGBT 600V 120A 298W TO3P

HGTG30N60B3,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
HGTG30N60B3

IGBT 600V 120A 298W TO3P

NGTB50N65FL2WG,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
NGTB50N65FL2WG

IGBT 600V 120A 298W TO3P

NGTB60N60SWG,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
NGTB60N60SWG

IGBT 600V 120A 298W TO3P

NGTB75N60SWG,https://www.jinftry.ru/product_detail/NGTB50N60S1WG
NGTB75N60SWG

IGBT 600V 120A 298W TO3P

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives

Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives 1N4004 is a silicon rectifier diode, which has the following typical parameter specifications: It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes, which are often used in various electronic devices for voltage rectification, such as power converters or power adapters. 1N4002 Diode Features/Technical Specifications (Partial Parameters): The pin str

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead

1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices. Picture 01 Basic parameters of 1N4148 diode: Maximum reverse voltage: 100V Maximum forward current: 200mA Peak Forward Current: 450mA Forward Voltage (at 1.0mA): 1V Reverse current (at 75V): 5nA Maximum working temperature: 150°C Maximum storage temperature: 175°C Switching time: 4ns 1N4148 diodes are common in applic

The latest 2N3055 transistor datasheet, application, and price analysis in 2023

2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP