N1467NC260

IXYS N1467NC260

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • N1467NC260
  • IXYS
  • SCR 2.6KV 2912A W11
  • Thyristors - SCRs
  • N1467NC260 Лист данных
  • TO-200AC, K-PUK
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/N1467NC260Lead free / RoHS Compliant
  • 21924
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
N1467NC260
Category
Thyristors - SCRs
Manufacturer
IXYS
Description
SCR 2.6KV 2912A W11
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
TO-200AC, K-PUK
Supplier Device Package
W11
Current - Hold (Ih) (Max)
1 A
Voltage - Off State
2.6 kV
Voltage - Gate Trigger (Vgt) (Max)
3 V
Current - Gate Trigger (Igt) (Max)
300 mA
Voltage - On State (Vtm) (Max)
1.69 V
Current - On State (It (AV)) (Max)
1467 A
Current - On State (It (RMS)) (Max)
2912 A
Current - Off State (Max)
100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm)
23.6A @ 50Hz
SCR Type
Standard Recovery
Package_case
TO-200AC, K-PUK

N1467NC260 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/N1467NC260

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/N1467NC260

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/N1467NC260

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о N1467NC260 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/N1467NC260
CMA80E1600HB,https://www.jinftry.ru/product_detail/N1467NC260
CMA80E1600HB

SCR 1.6KV 126A TO247

CMA40E1600HR,https://www.jinftry.ru/product_detail/N1467NC260
CMA40E1600HR

SCR 1.6KV 126A TO247

N0465WN140,https://www.jinftry.ru/product_detail/N1467NC260
N0465WN140

SCR 1.6KV 126A TO247

N0530YN250,https://www.jinftry.ru/product_detail/N1467NC260
N0530YN250

SCR 1.6KV 126A TO247

N1075LN180,https://www.jinftry.ru/product_detail/N1467NC260
N1075LN180

SCR 1.6KV 126A TO247

N0910LC260,https://www.jinftry.ru/product_detail/N1467NC260
N0910LC260

SCR 1.6KV 126A TO247

N1718NC180,https://www.jinftry.ru/product_detail/N1467NC260
N1718NC180

SCR 1.6KV 126A TO247

N2600MC160,https://www.jinftry.ru/product_detail/N1467NC260
N2600MC160

SCR 1.6KV 126A TO247

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP