MYS250

DComponents MYS250

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • MYS250
  • DComponents
  • Bridge R 1phase, 600V, 0.50A
  • Diodes - Bridge Rectifiers
  • MYS250 Лист данных
  • TO-269AA, 4-BESOP
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MYS250Lead free / RoHS Compliant
  • 3854
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MYS250
Category
Diodes - Bridge Rectifiers
Manufacturer
DComponents
Description
Bridge R 1phase, 600V, 0.50A
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-269AA, 4-BESOP
Supplier Device Package
4-SOIC
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
600 V
Current - Average Rectified (Io)
500 mA
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 500 mA
Current - Reverse Leakage @ Vr
5 µA @ 600 V
Package_case
TO-269AA, 4-BESOP

MYS250 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/MYS250

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/MYS250

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/MYS250

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о MYS250 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

DComponents

MYS380,https://www.jinftry.ru/product_detail/MYS250
MYS380

Bridge R 1phase, 800V, 0.50A

S250F,https://www.jinftry.ru/product_detail/MYS250
S250F

Bridge R 1phase, 800V, 0.50A

S40F,https://www.jinftry.ru/product_detail/MYS250
S40F

Bridge R 1phase, 800V, 0.50A

MYS40,https://www.jinftry.ru/product_detail/MYS250
MYS40

Bridge R 1phase, 800V, 0.50A

MMFTN620KDW-AQ,https://www.jinftry.ru/product_detail/MYS250
MMFTN620KDW-AQ

Bridge R 1phase, 800V, 0.50A

DI048N04PQ2-AQ,https://www.jinftry.ru/product_detail/MYS250
DI048N04PQ2-AQ

Bridge R 1phase, 800V, 0.50A

MMFT8472DW,https://www.jinftry.ru/product_detail/MYS250
MMFT8472DW

Bridge R 1phase, 800V, 0.50A

MMBT7002KW-AQ,https://www.jinftry.ru/product_detail/MYS250
MMBT7002KW-AQ

Bridge R 1phase, 800V, 0.50A

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP