MT29F3T08EUHBBM4-3R:B

Micron Technology Inc. MT29F3T08EUHBBM4-3R:B

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  • MT29F3T08EUHBBM4-3R:B
  • Micron Technology Inc.
  • IC FLASH 3TB PARALLEL 333MHZ
  • General Memory
  • MT29F3T08EUHBBM4-3R:B Лист данных
  • -
  • Tray
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MT29F3T08EUHBBM4-3R-BLead free / RoHS Compliant
  • 15842
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MT29F3T08EUHBBM4-3R:B
Category
General Memory
Manufacturer
Micron Technology Inc.
Description
IC FLASH 3TB PARALLEL 333MHZ
Package
Tray
Series
-
Voltage - Supply
2.5V ~ 3.6V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Memory Size
3Tb (384G x 8)
Technology
FLASH - NAND
Memory Type
Non-Volatile
Clock Frequency
333 MHz
Access Time
-
Memory Format
FLASH
Write Cycle Time - Word, Page
-
Memory Interface
Parallel
Package_case
-

MT29F3T08EUHBBM4-3R:B Гарантии

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