MSRTA200120(A)D

GeneSiC Semiconductor MSRTA200120(A)D

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • MSRTA200120(A)D
  • GeneSiC Semiconductor
  • DIODE GEN 1.2KV 200A 3 TOWER
  • Diodes - Rectifiers - Arrays
  • MSRTA200120(A)D Лист данных
  • Three Tower
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MSRTA200120-A-DLead free / RoHS Compliant
  • 3760
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MSRTA200120(A)D
Category
Diodes - Rectifiers - Arrays
Manufacturer
GeneSiC Semiconductor
Description
DIODE GEN 1.2KV 200A 3 TOWER
Package
Bulk
Series
-
Mounting Type
Chassis Mount
Package / Case
Three Tower
Supplier Device Package
Three Tower
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 200 A
Current - Reverse Leakage @ Vr
10 µA @ 1200 V
Diode Configuration
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
200A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 150°C
Package_case
Three Tower

MSRTA200120(A)D Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/MSRTA200120-A-D

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/MSRTA200120-A-D

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/MSRTA200120-A-D

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о MSRTA200120(A)D ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

GeneSiC Semiconductor

MURF20060R,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20060R

DIODE MODULE 600V 200A TO244AB

MURF20060,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20060

DIODE MODULE 600V 200A TO244AB

MURF20040R,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20040R

DIODE MODULE 600V 200A TO244AB

MURF20040,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20040

DIODE MODULE 600V 200A TO244AB

MURF20020R,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20020R

DIODE MODULE 600V 200A TO244AB

MURF20020,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20020

DIODE MODULE 600V 200A TO244AB

MURF20010R,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20010R

DIODE MODULE 600V 200A TO244AB

MURF20010,https://www.jinftry.ru/product_detail/MSRTA200120-A-D
MURF20010

DIODE MODULE 600V 200A TO244AB

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

ON NTD2955G series packages and features are different

NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP