MSD200-16

Microsemi Corporation MSD200-16

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • MSD200-16
  • Microsemi Corporation
  • BRIDGE RECT 3PHASE 1.6KV 200A M3
  • Diodes - Bridge Rectifiers
  • MSD200-16 Лист данных
  • M3
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MSD200-16Lead free / RoHS Compliant
  • 1471
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MSD200-16
Category
Diodes - Bridge Rectifiers
Manufacturer
Microsemi Corporation
Description
BRIDGE RECT 3PHASE 1.6KV 200A M3
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
M3
Supplier Device Package
M3
Technology
Standard
Diode Type
Three Phase
Voltage - Peak Reverse (Max)
1.6 kV
Current - Average Rectified (Io)
200 A
Voltage - Forward (Vf) (Max) @ If
1.55 V @ 300 A
Current - Reverse Leakage @ Vr
300 µA @ 1600 V
Package_case
M3

MSD200-16 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/MSD200-16

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/MSD200-16

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/MSD200-16

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о MSD200-16 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Microsemi Corporation
Microsemi Corporation,https://www.jinftry.ru/product_detail/MSD200-16
MSD160-16,https://www.jinftry.ru/product_detail/MSD200-16
MSD160-16

BRIDGE RECT 3PHASE 1.6KV 160A M3

MSD160-12,https://www.jinftry.ru/product_detail/MSD200-16
MSD160-12

BRIDGE RECT 3PHASE 1.6KV 160A M3

APT10DC120HJ,https://www.jinftry.ru/product_detail/MSD200-16
APT10DC120HJ

BRIDGE RECT 3PHASE 1.6KV 160A M3

APTDC20H601G,https://www.jinftry.ru/product_detail/MSD200-16
APTDC20H601G

BRIDGE RECT 3PHASE 1.6KV 160A M3

APTDF100H170G,https://www.jinftry.ru/product_detail/MSD200-16
APTDF100H170G

BRIDGE RECT 3PHASE 1.6KV 160A M3

APT40DC60HJ,https://www.jinftry.ru/product_detail/MSD200-16
APT40DC60HJ

BRIDGE RECT 3PHASE 1.6KV 160A M3

APT20DC120HJ,https://www.jinftry.ru/product_detail/MSD200-16
APT20DC120HJ

BRIDGE RECT 3PHASE 1.6KV 160A M3

APTDC40H601G,https://www.jinftry.ru/product_detail/MSD200-16
APTDC40H601G

BRIDGE RECT 3PHASE 1.6KV 160A M3

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP