Microsemi Corporation MS1008
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- MS1008
- Microsemi Corporation
- RF TRANS NPN 55V 30MHZ M164
- Transistors - Bipolar (BJT) - RF
- MS1008 Лист данных
- M164
- Bulk
-
Lead free / RoHS Compliant - 18352
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number MS1008 |
| Category Transistors - Bipolar (BJT) - RF |
| Manufacturer Microsemi Corporation |
| Description RF TRANS NPN 55V 30MHZ M164 |
| Package Bulk |
| Series - |
| Operating Temperature 200°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case M164 |
| Supplier Device Package M164 |
| Gain 14dB |
| Power - Max 233W |
| Transistor Type NPN |
| Current - Collector (Ic) (Max) 10A |
| Voltage - Collector Emitter Breakdown (Max) 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1.4A, 6V |
| Frequency - Transition 30MHz |
| Noise Figure (dB Typ @ f) - |
| Package_case M164 |
MS1008 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MS1008 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
MS1008 сопутствующие товары
Комментарии
Microsemi Corporation
UMIL3
RF TRANS NPN 30V 400MHZ 55FT
1002MP
RF TRANS NPN 30V 400MHZ 55FT
MS1261
RF TRANS NPN 30V 400MHZ 55FT
1000MP
RF TRANS NPN 30V 400MHZ 55FT
MS1336
RF TRANS NPN 30V 400MHZ 55FT
SD1526-01
RF TRANS NPN 30V 400MHZ 55FT
MS1227
RF TRANS NPN 30V 400MHZ 55FT
JAN2N2857UB
RF TRANS NPN 30V 400MHZ 55FT
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
