NXP USA Inc. MRFE6VP5150NR1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- MRFE6VP5150NR1
- NXP USA Inc.
- RF MOSFET LDMOS DL 50V TO270
- Transistors - FETs, MOSFETs - RF
- MRFE6VP5150NR1 Лист данных
- TO-270AB
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 3032
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number MRFE6VP5150NR1 |
| Category Transistors - FETs, MOSFETs - RF |
| Manufacturer NXP USA Inc. |
| Description RF MOSFET LDMOS DL 50V TO270 |
| Package Tape & Reel (TR) |
| Series - |
| Package / Case TO-270AB |
| Supplier Device Package TO-270 WB-4 |
| Frequency 230MHz |
| Gain 26.1dB |
| Noise Figure - |
| Power - Output 150W |
| Transistor Type LDMOS (Dual) |
| Voltage - Test 50 V |
| Current - Test 100 mA |
| Voltage - Rated 133 V |
| Current Rating (Amps) - |
| Package_case TO-270AB |
MRFE6VP5150NR1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MRFE6VP5150NR1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
MRFE6VP5150NR1 сопутствующие товары
Комментарии
NXP USA Inc.
MMRF1315NR1
FET RF 66V 880MHZ TO270
A2I25D025NR1
FET RF 66V 880MHZ TO270
MMRF1304NR1
FET RF 66V 880MHZ TO270
A2T23H300-24SR6
FET RF 66V 880MHZ TO270
MRF8P20165WHSR5
FET RF 66V 880MHZ TO270
MRF8P20140WHSR5
FET RF 66V 880MHZ TO270
MMRF1310HR5
FET RF 66V 880MHZ TO270
MMRF1305HR5
FET RF 66V 880MHZ TO270
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
The pain of "lack of core" EV hurts the most
The pain of "lack of core" EV hurts the most
"Lack of cores" is the biggest challenge currently facing the global automotive industry. Comparing the above figures, it is not difficult to imagine that hybrid and pure electric vehicles should be the hardest hit areas for "lack of cores". In this context, the Ministry of Industry and Information Technology guided the China Automotive Chip Industry Innovation Strategic Alliance and other institutions to launch the &quo
