Vishay Semiconductor - Diodes Division MMSZ5256B-G3-18
- MMSZ5256B-G3-18
- Vishay Semiconductor - Diodes Division
- DIODE ZENER 30V 500MW SOD123
- Diodes - Zener - Single
- MMSZ5256B-G3-18 Лист данных
- SOD-123
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 24734
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MMSZ5256B-G3-18 |
Category Diodes - Zener - Single |
Manufacturer Vishay Semiconductor - Diodes Division |
Description DIODE ZENER 30V 500MW SOD123 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case SOD-123 |
Supplier Device Package SOD-123 |
Tolerance ±5% |
Power - Max 500 mW |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 100 nA @ 23 V |
Voltage - Zener (Nom) (Vz) 30 V |
Impedance (Max) (Zzt) 49 Ohms |
Package_case SOD-123 |
MMSZ5256B-G3-18 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MMSZ5256B-G3-18 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Semiconductor - Diodes Division
MMSZ5254B-G3-18
DIODE ZENER 27V 500MW SOD123
MMSZ5253B-G3-18
DIODE ZENER 27V 500MW SOD123
MMSZ5252B-G3-18
DIODE ZENER 27V 500MW SOD123
MMSZ5251B-G3-18
DIODE ZENER 27V 500MW SOD123
MMSZ5250B-G3-18
DIODE ZENER 27V 500MW SOD123
MMSZ5249B-G3-18
DIODE ZENER 27V 500MW SOD123
MMSZ5248B-G3-18
DIODE ZENER 27V 500MW SOD123
MMSZ5247B-G3-18
DIODE ZENER 27V 500MW SOD123
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
Vishay TSOP753/TSOP755 infrared receiver module features
Vishay TSOP753/TSOP755 infrared receiver module features
Vishay TSOP753/TSOP755 infrared receiver module is mainly used for miniaturized infrared receiver module of infrared remote control system. Two PIN diodes and a preamplifier are assembled on a lead frame, and the epoxy resin package contains an IR filter. The TSOP753 series has been optimized in design to suppress all stray pulses of CFL and other energy-saving lamps. Continuous transmission, AGC3 can also suppress some data signals. The