Diodes Incorporated MMBZ5245BTS-7-F
- MMBZ5245BTS-7-F
- Diodes Incorporated
- DIODE ZENER ARRAY 15V SOT363
- Diodes - Zener - Arrays
- MMBZ5245BTS-7-F Лист данных
- 6-TSSOP, SC-88, SOT-363
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 2020
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MMBZ5245BTS-7-F |
Category Diodes - Zener - Arrays |
Manufacturer Diodes Incorporated |
Description DIODE ZENER ARRAY 15V SOT363 |
Package Jinftry-Reel® |
Series Automotive, AEC-Q101 |
Operating Temperature -65°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package SOT-363 |
Tolerance ±5% |
Power - Max 200 mW |
Configuration 3 Independent |
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
Current - Reverse Leakage @ Vr 100 nA @ 11 V |
Voltage - Zener (Nom) (Vz) 15 V |
Impedance (Max) (Zzt) 16 Ohms |
Package_case 6-TSSOP, SC-88, SOT-363 |
MMBZ5245BTS-7-F Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MMBZ5245BTS-7-F ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Diodes Incorporated
MMBZ5235BS-7-F
DIODE ZENER ARRAY 6.8V SOT363
BZX84C12TS-7-F
DIODE ZENER ARRAY 6.8V SOT363
DZ23C16-7-F
DIODE ZENER ARRAY 6.8V SOT363
MMBZ5243BS-7-F
DIODE ZENER ARRAY 6.8V SOT363
DZ23C6V2-7-F
DIODE ZENER ARRAY 6.8V SOT363
BZX84C15S-7-F
DIODE ZENER ARRAY 6.8V SOT363
MMBZ5258BS-7-F
DIODE ZENER ARRAY 6.8V SOT363
DZ23C8V2-7-F
DIODE ZENER ARRAY 6.8V SOT363
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.