Rectron USA MMBZ5241BW
- MMBZ5241BW
- Rectron USA
- DIODE ZENER 11V 200MW SOT-323
- Diodes - Zener - Single
- MMBZ5241BW Лист данных
- SC-70, SOT-323
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2312
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MMBZ5241BW |
Category Diodes - Zener - Single |
Manufacturer Rectron USA |
Description DIODE ZENER 11V 200MW SOT-323 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature - |
Mounting Type Surface Mount |
Package / Case SC-70, SOT-323 |
Supplier Device Package SOT-323 |
Tolerance ±5% |
Power - Max 200 mW |
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
Current - Reverse Leakage @ Vr 2 µA @ 8.4 V |
Voltage - Zener (Nom) (Vz) 11 V |
Impedance (Max) (Zzt) 22 Ohms |
Package_case SC-70, SOT-323 |
MMBZ5241BW Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MMBZ5241BW ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Rectron USA
DL4740A
DIODE ZENER 10V 1W LL-41
BZV55C 33BSB
DIODE ZENER 10V 1W LL-41
1SMAF2EZ17
DIODE ZENER 10V 1W LL-41
M3Z27VB
DIODE ZENER 10V 1W LL-41
BZT52C30S
DIODE ZENER 10V 1W LL-41
M3Z8V2B
DIODE ZENER 10V 1W LL-41
SMA3Z24A
DIODE ZENER 10V 1W LL-41
BZV55C 6.2BSB
DIODE ZENER 10V 1W LL-41
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.