ON Semiconductor MJB42CT4G
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- MJB42CT4G
- ON Semiconductor
- TRANS PNP 100V 6A D2PAK
- Transistors - Bipolar (BJT) - Single
- MJB42CT4G Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 855
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number MJB42CT4G |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer ON Semiconductor |
| Description TRANS PNP 100V 6A D2PAK |
| Package Tube |
| Series - |
| Operating Temperature -65°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D²PAK |
| Power - Max 2 W |
| Transistor Type PNP |
| Current - Collector (Ic) (Max) 6 A |
| Voltage - Collector Emitter Breakdown (Max) 100 V |
| Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A |
| Current - Collector Cutoff (Max) 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V |
| Frequency - Transition 3MHz |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MJB42CT4G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MJB42CT4G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
MJB42CT4G сопутствующие товары
Комментарии
ON Semiconductor
FJB102TM
TRANS NPN DARL 100V 8A TO263
KSC2334Y
TRANS NPN DARL 100V 8A TO263
FJAFS1720TU
TRANS NPN DARL 100V 8A TO263
2N4237
TRANS NPN DARL 100V 8A TO263
FDC6312P
TRANS NPN DARL 100V 8A TO263
FDG6306P
TRANS NPN DARL 100V 8A TO263
NTUD3169CZT5G
TRANS NPN DARL 100V 8A TO263
NDC7002N
TRANS NPN DARL 100V 8A TO263
battery charger
Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor, a leader in semiconductors for smart power and sensing technologies, recently launched the 1200V SPM31 Intelligent Power Module (IPM) using new seventh-generation insulated gate bipolar transistor (IGBT) technology. The SPM31 IPM excels in energy efficiency, size and power density compared to other leading solutions on the market, reducing overall system cost. These IPMs integrate
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
