MJ10001

Solid State Inc. MJ10001

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • MJ10001
  • Solid State Inc.
  • TO 3 20 AMP DARLINGTON TRANSISTO
  • Transistors - Bipolar (BJT) - Single
  • MJ10001 Лист данных
  • TO-204AA, TO-3
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MJ10001Lead free / RoHS Compliant
  • 2974
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MJ10001
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Solid State Inc.
Description
TO 3 20 AMP DARLINGTON TRANSISTO
Package
Bulk
Series
SWITCHMODE
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-3
Power - Max
175 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
20 A
Voltage - Collector Emitter Breakdown (Max)
500 V
Vce Saturation (Max) @ Ib, Ic
3V @ 1A, 20A
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5A, 5V
Frequency - Transition
-
Package_case
TO-204AA, TO-3

MJ10001 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/MJ10001

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/MJ10001

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/MJ10001

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о MJ10001 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Solid State Inc.

2N6339,https://www.jinftry.ru/product_detail/MJ10001
2N6339

TO 3 25 AMP SILICON TRANSISTOR

2N6340,https://www.jinftry.ru/product_detail/MJ10001
2N6340

TO 3 25 AMP SILICON TRANSISTOR

RCA423,https://www.jinftry.ru/product_detail/MJ10001
RCA423

TO 3 25 AMP SILICON TRANSISTOR

2N6420,https://www.jinftry.ru/product_detail/MJ10001
2N6420

TO 3 25 AMP SILICON TRANSISTOR

2N6423,https://www.jinftry.ru/product_detail/MJ10001
2N6423

TO 3 25 AMP SILICON TRANSISTOR

2N6421,https://www.jinftry.ru/product_detail/MJ10001
2N6421

TO 3 25 AMP SILICON TRANSISTOR

2N6422,https://www.jinftry.ru/product_detail/MJ10001
2N6422

TO 3 25 AMP SILICON TRANSISTOR

MJ10012,https://www.jinftry.ru/product_detail/MJ10001
MJ10012

TO 3 25 AMP SILICON TRANSISTOR

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications

1N5819 Schottky Diode Description: 1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP