IXYS MIEB100W1200TEH
- MIEB100W1200TEH
- IXYS
- IGBT MODULE 1200V 183A 630W E3
- Transistors - IGBTs - Modules
- MIEB100W1200TEH Лист данных
- E3
- Box
- Lead free / RoHS Compliant
- 1423
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MIEB100W1200TEH |
Category Transistors - IGBTs - Modules |
Manufacturer IXYS |
Description IGBT MODULE 1200V 183A 630W E3 |
Package Box |
Series - |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Chassis Mount |
Package / Case E3 |
Supplier Device Package E3 |
Power - Max 630 W |
Configuration Three Phase Inverter |
Current - Collector (Ic) (Max) 183 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 300 µA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A |
Input Capacitance (Cies) @ Vce 7.43 nF @ 25 V |
Input Standard |
NTC Thermistor Yes |
Package_case E3 |
MIEB100W1200TEH Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
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