ME501206

Powerex Inc. ME501206

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • ME501206
  • Powerex Inc.
  • BRIDGE RECT 3P 1.2KV 60A MODULE
  • Diodes - Bridge Rectifiers
  • ME501206 Лист данных
  • Module
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/ME501206Lead free / RoHS Compliant
  • 29332
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
ME501206
Category
Diodes - Bridge Rectifiers
Manufacturer
Powerex Inc.
Description
BRIDGE RECT 3P 1.2KV 60A MODULE
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Technology
Standard
Diode Type
Three Phase
Voltage - Peak Reverse (Max)
1.2 kV
Current - Average Rectified (Io)
60 A
Voltage - Forward (Vf) (Max) @ If
1.3 V @ 60 A
Current - Reverse Leakage @ Vr
10 mA @ 1200 V
Package_case
Module

ME501206 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/ME501206

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/ME501206

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/ME501206

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о ME501206 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Powerex Inc.

RM75TPM-H,https://www.jinftry.ru/product_detail/ME501206
RM75TPM-H

BRIDGE RECT 3P 800V 150A MODULE

RM75TPM-2H,https://www.jinftry.ru/product_detail/ME501206
RM75TPM-2H

BRIDGE RECT 3P 800V 150A MODULE

RM30TPM-H,https://www.jinftry.ru/product_detail/ME501206
RM30TPM-H

BRIDGE RECT 3P 800V 150A MODULE

RM20TPM-H,https://www.jinftry.ru/product_detail/ME501206
RM20TPM-H

BRIDGE RECT 3P 800V 150A MODULE

RM20TPM-2H,https://www.jinftry.ru/product_detail/ME501206
RM20TPM-2H

BRIDGE RECT 3P 800V 150A MODULE

MEB00806,https://www.jinftry.ru/product_detail/ME501206
MEB00806

BRIDGE RECT 3P 800V 150A MODULE

ME701603,https://www.jinftry.ru/product_detail/ME501206
ME701603

BRIDGE RECT 3P 800V 150A MODULE

ME500806,https://www.jinftry.ru/product_detail/ME501206
ME500806

BRIDGE RECT 3P 800V 150A MODULE

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP